III-nitride semiconductor membrane electronics and optoelectronics for heterogeneous integration

被引：4
作者：
Chen, Renfeng [1 ,2 ]
Song, Yijian [1 ,2 ]
He, Rui [1 ,2 ]
Wang, Junxi [1 ,2 ]
Li, Jinmin [1 ,2 ]
Wei, Tongbo [1 ,2 ]
机构：
[1] Chinese Acad Sci, Res & Dev Ctr Wide Bandgap Semicond, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
来源：
PROGRESS IN QUANTUM ELECTRONICS | 2024年 / 98卷
基金：
北京市自然科学基金; 中国国家自然科学基金;
关键词：
III-nitride semiconductors; Lift-off; Bonding technology; Flexible; Heterogenous integration; LASER LIFT-OFF; LIGHT-EMITTING-DIODES; PIEZOELECTRIC THIN-FILMS; MULTIPLE-QUANTUM WELLS; GALLIUM-NITRIDE; ON-CHIP; SINGLE-CRYSTALLINE; EPITAXIAL-GROWTH; HIGH-FREQUENCY; WAALS EPITAXY;
D O I：
10.1016/j.pquantelec.2024.100536
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The rapidly developing III-nitrides materials and devices technologies are driving the advancements in hybrid heterogeneous structures for multi-material and multifunctional electronic or optoelectronic integrated systems. Beyond heteroepitaxial growth, the process integrations of freestanding thin-film devices open up more possibilities for high levels of integration and multifunctionalization applications, overcoming the limitations of epitaxial substrate materials. Benefiting from the abundant and exceptional electrical and photoelectrical properties of IIInitrides, the heterogeneous integration of thin-film devices significantly enhances the functional capabilities in the fields of on-chip optical communication, micro-LED display, and flexible sensing. In this review, we present a comprehensive overview of freestanding thin-film device fabrication technology and its integration strategies. We discuss the characteristics of both conventional and advanced III-nitride epilayer transfer technologies, focusing on lift-off, transfer, bonding, and integration process. Promising applications are summarized based on the integration technology of transferable III-nitride thin-film devices. Additionally, we analyze the remaining challenges in manufacturing and application of III-nitride thin-film devices for advanced heterogeneous integrations. The further development of these technologies will promote the research of III-nitrides in pioneering fields, including high-speed photoelectric integrated communication system, cost-effective Micro-LED display and reliable biosensing applications.
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页数：36
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