Sr-Doping-Modulated Metal-Insulator Transition in NdNiO3 Epitaxial Films

被引:1
作者
Ye, Huan [1 ]
Hua, Enda [1 ]
Xu, Fang [1 ]
Lu, Jingdi [1 ]
Jin, Feng [1 ]
Wu, Wenbin [1 ]
Si, Liang [2 ]
Wang, Lingfei [1 ]
机构
[1] Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, Hefei 230026, Peoples R China
[2] Northwest Univ, Sch Phys, Xian 710127, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
PEROVSKITES; CHARGE; PHASES;
D O I
10.1088/0256-307X/41/11/117301
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Perovskite-structured nickelates, ReNiO3 (Re = rare earth), have long garnered significant research interest due to their sharp and highly tunable metal-insulator transitions (MITs). Doping the parent compound ReNiO3 with alkaline earth metal can substantially suppress this MIT. Recently, intriguing superconductivity has been discovered in doped infinite-layer nickelates (ReNiO2), while the mechanism behind A-site doping-suppressed MIT in the parent compound ReNiO3 remains unclear. To address this problem, we grew a series of Nd1-xSrxNiO3 (NSNO, x = 0-0.2) thin films and conducted systematic electrical transport measurements. Our resistivity and Hall measurements suggest that Sr-induced excessive holes are not the primary reason for MIT suppression. Instead, first-principles calculations indicate that Sr cations, with larger ionic radius, suppress breathing mode distortions and promote charge transfer between oxygen and Ni cations. This process weakens Ni-O bond disproportionation and Ni2+/Ni4+ charge disproportionation. Such significant modulations in lattice and electronic structures convert the ground state from a charge-disproportionated antiferromagnetic insulator to a paramagnetic metal, thereby suppressing the MIT. This scenario is further supported by the weakened MIT observed in the tensile-strained NSNO/SrTiO3(001) films. Our work reveals the A-side doping-modulated electrical transport of perovskite nickelate films, providing deeper insights into novel electric phases in these strongly correlated nickelate systems.
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页数:8
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