Ultralow-Power Circuit and Sensing Applications Based on Subthermionic Threshold Switching Transistors

被引:1
作者
Devnath, Anupom [1 ]
Bae, Junseong [1 ]
Alimkhanuly, Batyrbek [1 ]
Lee, Gisung [1 ]
Lee, Seunghyun [1 ]
Kadyrov, Arman [1 ]
Patil, Shubham [1 ]
Lee, Seunghyun [1 ]
机构
[1] Kyung Hee Univ, Dept Elect & Informat Convergence Engn, Yongin 17104, Gyeonggi Do, South Korea
基金
新加坡国家研究基金会;
关键词
IGZO; threshold-switching FET; low SS; energy-efficient; logic inverter; amplifier circuit; photodetector; FIELD-EFFECT TRANSISTORS; BLACK PHOSPHORUS; HIGH-PERFORMANCE; HYSTERESIS; THICKNESS; SENSORS;
D O I
10.1021/acsnano.4c08650
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The most recent breakthrough in state-of-the-art electronics and optoelectronics involves the adoption of steep-slope field-effect transistors (FETs), promoting sub-60 mV/dec subthreshold swing (SS) at ambient temperature, effectively overcoming "Boltzmann limit" to minimize power consumption. Here, a series integration of nanoscale copper-based resistive-filamentary threshold switch (TS) with the IGZO channel-based FET is used to develop a TS-FET, in which the turn-on characteristics exhibit an abrupt transition over five decades, with an extremely low SS of 7 mV/dec, a high on/off ratio (>109), and ultralow leakage current (40-fold decrease), ensuring excellent repeatability and device yield. Unlike previous device-centric studies, this work highlights potential circuit applications (logic-inverter, pulse-sensor amplification, and photodetector) based on TS-FET. The sharp transition behavior of TS-FET enables the establishment of logic inverters with a high voltage gain of approximate to 800, with a circuit-level demonstration achieving a bias-independent record-high intrinsic gain (>1000). A wearable pulse sensor integrated with an amplifier circuit ensured the precise amplification of electrophysical signals by 450 times. In addition, the application of a TS-FET-based photodetector features high responsivity (1.08 x 104 mA/W) and detectivity (1.03 x 1020 Jones). The low-power strategy of TS-FETs is promising for the development of energy-efficient integrated circuits alongside sensor-interconnected biomedical applications in wearable technology.
引用
收藏
页码:30497 / 30511
页数:15
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