Phase separation induced controllable nanoscale roughness in PS-b-PMMA Di-block copolymer thin films for enhanced anti-reflectivity

被引:0
|
作者
Killada, Suresh [1 ]
Nathani, Akash [1 ]
Karim, Alamgir [2 ,3 ]
Sharma, Chandra S. [1 ]
机构
[1] Indian Inst Technol, Dept Chem Engn, Creat & Adv Res Based Nanomat CARBON Lab, Hyderabad 502285, Telangana, India
[2] Univ Akron, Dept Polymer Engn, Akron, OH 44308 USA
[3] Univ Houston, William A Brookshire Dept Chem & Biomol Engn, Houston, TX 77004 USA
来源
NANO EXPRESS | 2024年 / 5卷 / 04期
关键词
PS-b-PMMA; phase separation; porosity; roughness; anti-reflective surfaces; DIBLOCK COPOLYMER; BROAD-BAND; SOLVENT; SURFACES; COATINGS; BRUSHES;
D O I
10.1088/2632-959X/ad8468
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This study demonstrates a simple method to control surface roughness and, consequently, the optical properties of PS-b-PMMA thin films. By utilizing different solvent combinations and post-treatment steps, we can precisely tune the surface morphology, leading to significant variations in the films' reflectance and transmittance characteristics. As-fabricated rough and porous PS-b-PMMA thin films exhibited omnidirectional broadband anti-reflective behaviour, with surface roughness values ranging from similar to 25 nm to 300 nm. Reflectance measurements showed near-zero reflection (as low as 0.045%) for PS-b-PMMA thin films, and transmittance was minimized to 0.7%. This work uniquely demonstrates the ability to tune surface roughness over more than one order of magnitude, from nano to sub-micron scale, using a straightforward and scalable method. The significant reduction in reflectance and transmittance achieved in this study underscores the potential application of these films in optoelectronic devices, marking a notable advancement over existing techniques.
引用
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页数:8
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