Van der Waals heterostructure of Bi2O2Se/MoTe2 for high-performance multifunctional devices

被引：0

作者：

Sun, Li ^{[1
]}

Xu, Yongshan ^{[2
]}

Yin, Tingting ^{[1
]}

Wan, Rui ^{[1
]}

Ma, Yanan ^{[3
]}

Su, Jun ^{[1
]}

Zhang, Zhi ^{[1
]}

Liu, Nishuang ^{[1
]}

Li, Luying ^{[1
]}

Zhai, Tianyou ^{[2
]}

Gao, Yihua ^{[1
,3
]}

机构：

[1] School of Physics & Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, Wuhan,430074, China

[2] State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan,430074, China

[3] Hubei Key Laboratory of Critical Materials of New Energy Vehicles & School of Mathematics, Physics and Optoelectronic Engineering, Hubei University of Automotive Technology, Shiyan,442002, China

来源：

Nano Energy | 2024年 / 119卷

基金：

中国国家自然科学基金;

关键词：

Bismuth compounds - Diodes - Display devices - Electron transport properties - Infrared devices - Molybdenum compounds - Photodetectors - Photons - Tellurium compounds - Thermionic emission - Van der Waals forces;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Two-dimensional van der Waals heterostructures exhibit distinctive electronic and optoelectronic properties, making them promising structures for constructing advanced multifunctional devices. However, devices based on conventional charge-carrier transport mechanisms often perform only a single function, which limits its integration and performance. Here, we present a vertical van der Waals heterostructure made of Bi2O2Se and MoTe2, allowing it to act as high-performance backward diode, forward diode, photodetector and photovoltaic device at various working conditions. The applications are enabled by band-alignment switching between p–n heterostructure controlled by minority carrier diffusion and n–n heterostructure governed by the thermionic emission and tunneling-mediated processes. As a backward diode, the device displays a high reverse rectification ratio of 5.0 × 104. As a photodetector, the device demonstrates a broad spectral photoresponse ranging from ultraviolet (365 nm) to near-infrared (1050 nm). When irradiated by 532 nm laser, the photodetector shows a responsivity of up to 11.6 A/W and achieves quick response/recovery speed of 19.6/8.8 μs. As a photovoltaics device, an external quantum efficiency of 78% and a responsivity of 0.33 A/W are observed. This study showcases the potential for high-performance multifunctional devices utilizing Bi2O2Se/MoTe2 heterostructures and provides comprehensive insights into the designed band alignment and its applications. © 2023 Elsevier Ltd

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