Role of oxygen in enhancing magnetism of Fe-doped MoSi2N4 monolayer from first-principles study

被引:1
作者
Wang, Yueqin [1 ]
Cao, Huan [1 ]
Chen, Fuzhang [2 ]
Liu, Yin [3 ,4 ]
机构
[1] Anhui Univ Sci & Technol, Sch Mech & Optoelect Phys, Huainan 232001, Anhui, Peoples R China
[2] South China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510641, Guangdong, Peoples R China
[3] Anhui Univ Sci & Technol, Sch Mat Sci & Engn, Huainan 232001, Anhui, Peoples R China
[4] Anhui Univ Sci & Technol, Anhui Int Joint Res Ctr Nano Carbon based Mat & En, Huainan 232001, Peoples R China
关键词
Electronics structure; Magnetism; First-principles calculations; SURFACES; GRAPHENE; DEVICES;
D O I
10.1016/j.ssc.2024.115716
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
MoSi2N4 is a new type of two-dimensional layered material, which is semiconducting with novel valley-physics properties and excellent stability, suggesting its great applications in the field of valleytronics and spintronics. In present work, the spin-polarized electronic structure and magnetic properties of different doping models of MoSi2N4 are investigated based on first principles. The results show that Fe doping presents a semi-metallic band structure, inducing a total magnetic moment of 4.01 mu B. For Fe + O co-doping configuration, further introduction of the O atom increases the total magnetic moment to 5.0 mu B. The magnetic moments mainly originate from the coupling of Fe-3d and O-2p and Mo-4d and O-2p. Then, the calculations show that the stability of Fe + O + Fe codoping configuration is enhanced and exhibits antiferromagnetic order with a total magnetic moment of about 0.98 mu B. Due to the antiferromagnetic interaction, the magnetic moment is mainly derived from the hybridization of Mo-4d and O-2p states, and a transition from semi-metallic to metallic band structure is observed.
引用
收藏
页数:6
相关论文
共 40 条
[1]   Substitutional transition metal doping in MoSi2N4 monolayer: structural, electronic and magnetic properties [J].
Abdelati, Mohamed A. ;
Maarouf, Ahmed A. ;
Fadlallah, Mohamed M. .
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2022, 24 (05) :3035-3042
[2]   Linear universal variation versus electronegativity-inverse of the magnetic moments induced by dopants on their anion ligands in DMS [J].
Andriotis, Antonis N. ;
Menon, Madhu .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2019, 489
[3]   Tunable electronic and magnetic properties of MoSi2N4 monolayer via vacancy defects, atomic adsorption and atomic doping [J].
Bafekry, A. ;
Faraji, M. ;
Fadlallah, Mohamed M. ;
Khatibani, A. Bagheri ;
Ziabari, A. abdolahzadeh ;
Ghergherehchi, M. ;
Nedaei, Sh ;
Shayesteh, S. Farjami ;
Gogova, D. .
APPLIED SURFACE SCIENCE, 2021, 559 (559)
[4]   MoSi2N4 single-layer: a novel two-dimensional material with outstanding mechanical, thermal, electronic and optical properties [J].
Bafekry, A. ;
Faraji, M. ;
Hoat, D. M. ;
Shahrokhi, M. ;
Fadlallah, M. M. ;
Shojaei, F. ;
Feghhi, S. A. H. ;
Ghergherehchi, M. ;
Gogova, D. .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 54 (15)
[5]   Tuning the bandgap and introducing magnetism into monolayer BC3 by strain/defect engineering and adatom/molecule adsorption [J].
Bafekry, Asadollah ;
Shayesteh, Saber Farjami ;
Ghergherehchi, Mitra ;
Peeters, Francois M. .
JOURNAL OF APPLIED PHYSICS, 2019, 126 (14)
[6]   Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials [J].
Bernardi, Marco ;
Palummo, Maurizia ;
Grossman, Jeffrey C. .
NANO LETTERS, 2013, 13 (08) :3664-3670
[7]  
Bian Y.-T., 2020, arXiv
[8]   Monolayer diodes light up [J].
Bratschitsch, Rudolf .
NATURE NANOTECHNOLOGY, 2014, 9 (04) :247-248
[9]   Two-dimensional van der Waals electrical contact to monolayer MoSi2N4 [J].
Cao, Liemao ;
Zhou, Guanghui ;
Wang, Qianqian ;
Ang, L. K. ;
Ang, Yee Sin .
APPLIED PHYSICS LETTERS, 2021, 118 (01)
[10]   2D MoS2 as an efficient protective layer for lithium metal anodes in high-performance Li-S batteries [J].
Cha, Eunho ;
Patel, Mumukshu D. ;
Park, Juhong ;
Hwang, Jeongwoon ;
Prasad, Vish ;
Cho, Kyeongjae ;
Choi, Wonbong .
NATURE NANOTECHNOLOGY, 2018, 13 (04) :337-+