Research on Improving Temperature Uniformity of Wafer Bonding Platforms

被引：0

作者：

Xu, Xingyu ^{[1
]}

Li, Zaoyang ^{[1
]}

Shi, Ruijing ^{[1
]}

Luo, Jinping ^{[1
]}

Wang, Chengjun ^{[2
]}

Li, Anhua ^{[2
]}

Xue, Zhiping ^{[2
]}

Zhang, Hui ^{[3
]}

机构：

[1] School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an

[2] The 2nd Research Institute of CETC, Taiyuan

[3] School of Mechanical Engineering, Southeast University, Nanjing

来源：

Hsi-An Chiao Tung Ta Hsueh/Journal of Xi'an Jiaotong University | 2024年 / 58卷 / 11期

关键词：

integrated circuit; numerical simulation; temperature uniformity; wafer bonding table;

D O I：

10.7652/xjtuxb202411011

中图分类号：

学科分类号：

摘要：

To enhance the temperature uniformity of wafer bonding platforms for integrated circuits, the mainstream 200 mm -wafer bonding platform is selected as the subject of research, and heating experiments are conducted on this platform. A three-dimensional heat transfer numerical model of the bonding process is developed and validated to study the temperature formation and distribution within the bonding platform. A simple and effective strategy is proposed to significantly improve the temperature uniformity of the bonding platform. The research findings reveal that the non-centrally symmetrical distribution of heating wires wound inside the heating plate leads to uneven temperature distribution on the working surface of the bonding platform. Without considering the alignment of high and low-temperature zones of the upper and lower heating plates, the overall temperature uniformity of the working surface is 3. 2% 9 with a radial temperature uniformity of 1. 1 °C. Rotating either the upper or lower heating plate provides spatial compensation for the distribution of high and low-temperature zones of the two heating plates? resulting in a substantial enhancement in the temperature uniformity of the bonding platform. Following a 50° counterclockwise rotation of the upper heating plate? the overall temperature uniformity of the working surface of the bonding platform achieves 1. 3%, with the radial temperature uniformity reaching 0. 3 °C. This research contributes to a deeper comprehension of heat transfer and temperature distribution within the wafer bonding platform, which is of reference significance to the fine design of bonding platforms and the improvement of the bonding processes. © 2024 Xi'an Jiaotong University. All rights reserved.

引用

页码：119 / 127

页数：8

共 21 条

[1]

WU Fan, TIAN He, SHEN Yang, Et al., Vertical MoS2 transistors with sub-l-nm gate lengths, Nature, 603, 7900, pp. 259-264, (2022)

[2]

LUNDSTROM M., Moore's law forever?, Science, 299, 5601, pp. 210-211, (2003)

[3]

KAWAURA H, SAKAMOTO T, BABA T., Observation of source-to-drain direct tunneling current in 8 nm gate electrically variable shallow junction mctal-ox-idc-scmiconductor field-effect transistors, Applied Physics Letters, 76, 25, pp. 3810-3812, (2000)

[4]

FRANKLIN A D., Nanomaterials in transistors: from high-performance to thin-film applications, Science, 319, 6219, (2015)

[5]

THLIS T N, SOLOMON P M., It's time to reinvent the transistor!, Science, 327, 5973, pp. 1600-1601, (2010)

[6]

CHAU R, DOYLE B, DATTA S, Et al., Integrated nanoclcctronics for the future, Nature Materials, 6, 11, pp. 810-812, (2007)

[7]

XIANG Weiwei, Microsystem with SiP and SoP Integration Technology, Electronics Process Technology, 12, 1, pp. 187-191, (2021)

[8]

STIEBINGM, VOGEL D, STELLER W, Et al., Challenges in the reliability of 3D integration using TS-Vs, 2015 16th International Confere ncc on Thermal , Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, pp. 1-8, (2015)

[9]

WANG Chenxi, WANG Te, XU Jikai, Et al., Research progress of wafer direct bonding and room-tcm-pcraturc bonding technology, Journal of Nctshapc Forming Engineering, 10, 1, pp. 67-73, (2018)

[10]

HAO Jishan, XIANG Weiwei, 3D heterogeneous integration for micro-system and its application, Electronics Process Technology, 39, 6, pp. 317-321, (2018)

← 1 2 3 →