2D Gr/WSe2/MoTe2 vertical heterojunction for self-powered photodiode with ultrafast response and high sensitivity

被引：0
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作者：
Wang, Shuailong [1 ]
Wu, Zhangting [1 ]
Ruan, Haozhe [1 ]
Zheng, Liang [1 ]
Zhang, Yang [1 ]
机构：
[1] Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou,310018, China
来源：
Journal of Alloys and Compounds | 1600年 / 1006卷
关键词：
Two-dimensional materials without lattice constraints can be combined into form heterojunctions via van der Waals forces; providing opportunities for the future development of novel high-performance photodetectors. In non-vertical heterojunction devices with long carrier transport channels; SRH recombination due to defect and interface states in the heterojunction and Langevin recombination due to Coulomb interactions induce large amounts of photogenerated carrier recombination; leading to low quantum efficiencies of the heterojunction. At the same time; defect and interface trap states; as well as the long channel of the non-vertical heterojunction device; lead to a slow response speed of the device. In this work; a 2D WSe2/MoTe2 vertical heterojunction photodiode with a transparent graphene top electrode has been designed to simultaneously achieve high sensitivity and fast response speed of photodetectors. Benefiting from the vertical device structure; high-quality interface and low contact resistance; the photogenerated electron-hole pairs can be efficiently separated and transported. The photodiode exhibits remarkable rectification characteristics with a rectification ratio as high as 1.4 × 104; and provides a broadband and self-powered photodetection from the visible to NIR bands (405–1064 nm) with a maximum responsivity of 0.33 A/W at 785 nm. In particular; the photodiode achieves an ultra-fast rise/fall time of 6.49/6.22 μs at 0 V and a further reduction of the response time to 1.68/1.2 μs at a reverse bias of −1 V. This ultra-fast response allows the photodiode to detect switching signals with a cutoff frequency of more than 70 kHz and 200 kHz at 0 V and −1 V; respectively. This work opens up new opportunities for the development of integrated 2D photodetectors with low power consumption; high sensitivity; and high speed. © 2024 Elsevier B.V;
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