2D Gr/WSe2/MoTe2 vertical heterojunction for self-powered photodiode with ultrafast response and high sensitivity

被引：0
|
作者：
Wang, Shuailong [1 ]
Wu, Zhangting [1 ]
Ruan, Haozhe [1 ]
Zheng, Liang [1 ]
Zhang, Yang [1 ]
机构：
[1] Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou,310018, China
来源：
Journal of Alloys and Compounds | 1600年 / 1006卷
关键词：
Two-dimensional materials without lattice constraints can be combined into form heterojunctions via van der Waals forces; providing opportunities for the future development of novel high-performance photodetectors. In non-vertical heterojunction devices with long carrier transport channels; SRH recombination due to defect and interface states in the heterojunction and Langevin recombination due to Coulomb interactions induce large amounts of photogenerated carrier recombination; leading to low quantum efficiencies of the heterojunction. At the same time; defect and interface trap states; as well as the long channel of the non-vertical heterojunction device; lead to a slow response speed of the device. In this work; a 2D WSe2/MoTe2 vertical heterojunction photodiode with a transparent graphene top electrode has been designed to simultaneously achieve high sensitivity and fast response speed of photodetectors. Benefiting from the vertical device structure; high-quality interface and low contact resistance; the photogenerated electron-hole pairs can be efficiently separated and transported. The photodiode exhibits remarkable rectification characteristics with a rectification ratio as high as 1.4 × 104; and provides a broadband and self-powered photodetection from the visible to NIR bands (405–1064 nm) with a maximum responsivity of 0.33 A/W at 785 nm. In particular; the photodiode achieves an ultra-fast rise/fall time of 6.49/6.22 μs at 0 V and a further reduction of the response time to 1.68/1.2 μs at a reverse bias of −1 V. This ultra-fast response allows the photodiode to detect switching signals with a cutoff frequency of more than 70 kHz and 200 kHz at 0 V and −1 V; respectively. This work opens up new opportunities for the development of integrated 2D photodetectors with low power consumption; high sensitivity; and high speed. © 2024 Elsevier B.V;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [1] 2D Gr/WSe2/MoTe2 vertical heterojunction for self-powered photodiode with ultrafast response and high sensitivity
    Wang, Shuailong
    Wu, Zhangting
    Ruan, Haozhe
    Zheng, Liang
    Zhang, Yang
    JOURNAL OF ALLOYS AND COMPOUNDS, 2024, 1006
  • [2] ReS2/Si 2D/3D vertical heterojunction as a self-powered photodiode
    Intonti, Kimberly
    Pelella, Aniello
    Neill, Hazel
    Patil, Vilas
    Hurley, Paul K.
    Ansari, Lida
    Gity, Farzan
    Di Bartolomeo, Antonio
    APPLIED PHYSICS LETTERS, 2024, 125 (17)
  • [3] Self-Powered Photodetector With High Polarization Sensitivity Enabled by Ta2PdS6/MoTe2 Heterojunction
    Xiong, Rui
    Chen, Quan
    Zheng, Tao
    Pan, Zhidong
    Huo, Nengjie
    Liu, Meizhuang
    Chen, Jiapeng
    Li, Jingbo
    Hao, Derek
    Chen, Zuxin
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (04) : 2729 - 2735
  • [4] Self-Powered 2D MoS2/WOx/WSe2 Heterojunction Photodetector Realized by Oxygen Plasma Treatment
    Shin, Hoseong
    Taqi, Muhammad
    Ali, Fida
    Lee, Sungwon
    Choi, Min Sup
    Kim, Cihyun
    Lee, Byoung-Hun
    Liu, Xiaochi
    Sun, Jian
    Oh, Byungdu
    Yoo, Won Jong
    ADVANCED MATERIALS INTERFACES, 2022, 9 (32):
  • [5] Self-Powered Photodetector with High Efficiency and Polarization Sensitivity Enabled by WSe2/Ta2NiSe5/WSe2 van der Waals Dual Heterojunction
    Zheng, Tao
    Yang, Mengmeng
    Pan, Yuan
    Zheng, Zhaoqiang
    Sun, Yiming
    Li, Ling
    Huo, Nengjie
    Luo, Dongxiang
    Gao, Wei
    Li, Jingbo
    ACS APPLIED MATERIALS & INTERFACES, 2023, 15 (24) : 29363 - 29374
  • [6] Self-Powered, Highly Sensitive, High-Speed Photodetection Using ITO/WSe2/SnSe2 Vertical Heterojunction
    Murali, Krishna
    Majumdar, Kausik
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (10) : 4141 - 4148
  • [7] A WSe2/β-Ga2O3 2D/3D heterojunction for self-powered solar-blind communication
    Zhou, Xin
    Zhang, Jinzhong
    Shang, Liyan
    Li, Yawei
    Zhu, Liangqing
    Chu, Junhao
    Hu, Zhigao
    APPLIED PHYSICS LETTERS, 2023, 122 (26)
  • [8] Red phosphorus/WSe2 heterojunction based self-powered UV photodetector
    Tulika Bajpai
    Ajay Kumar Dwivedi
    R. K. Nagaria
    Shweta Tripathi
    Optical and Quantum Electronics, 2024, 56
  • [9] Red phosphorus/WSe2 heterojunction based self-powered UV photodetector
    Bajpai, Tulika
    Dwivedi, Ajay Kumar
    Nagaria, R. K.
    Tripathi, Shweta
    OPTICAL AND QUANTUM ELECTRONICS, 2024, 56 (03)
  • [10] Strong polarization sensitivity in a two-dimensional MoS2/WSe2 heterojunction for self-powered photodetection
    Zhang, Xianjun
    Qiu, Dan
    Zhou, Pan
    Hou, Pengfei
    APPLIED PHYSICS LETTERS, 2024, 124 (04)
12345