Using first-principles calculation based on density-functional theory and density-functional perturbation theory, the microscopic structure and dielectric properties of Lanthanide (Ln) doped BaTiO3 3 are investigated. The doped Ln atoms exhibit significant displacement from Ba sites for charge compensation, forming off-centered configurations. This displacement is more pronounced for elements with smaller ionic radii. The change in ionic dielectric constant is strongly correlated with Ln displacement and Ln ion radius. As Ln displacement (ionic radius) increases (decreases), Ln-doped BaTiO3 3 has a higher ionic dielectric constant. However, regardless of the Ln species, the added Ln reduces the ionic dielectric constant compared to pristine BaTiO3. 3 .
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China Univ Min & Technol, Dept Phys, Xuzhou 221116, Jiangsu, Peoples R ChinaChina Univ Min & Technol, Dept Phys, Xuzhou 221116, Jiangsu, Peoples R China
Duan, Yifeng
Tang, Gang
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China Univ Min & Technol, Dept Phys, Xuzhou 221116, Jiangsu, Peoples R ChinaChina Univ Min & Technol, Dept Phys, Xuzhou 221116, Jiangsu, Peoples R China
Tang, Gang
Chen, Changqing
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Tsinghua Univ, AML, Dept Engn Mech, Beijing 100084, Peoples R China
Tsinghua Univ, CNMM, Beijing 100084, Peoples R ChinaChina Univ Min & Technol, Dept Phys, Xuzhou 221116, Jiangsu, Peoples R China
Chen, Changqing
Lu, Tianjian
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Xi An Jiao Tong Univ, Sch Aerosp, Xian 710049, Shanxi Province, Peoples R ChinaChina Univ Min & Technol, Dept Phys, Xuzhou 221116, Jiangsu, Peoples R China
Lu, Tianjian
Wu, Zhigang
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Colorado Sch Mines, Dept Phys, Golden, CO 80401 USAChina Univ Min & Technol, Dept Phys, Xuzhou 221116, Jiangsu, Peoples R China
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Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA
Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USAUniv Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA
Niranjan, Manish K.
Velev, Julian P.
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Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA
Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USAUniv Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA
Velev, Julian P.
Duan, Chun-Gang
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E China Normal Univ, Minist Educ, Key Lab Polarized Mat & Devices, Shanghai 200062, Peoples R ChinaUniv Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA
Duan, Chun-Gang
Jaswal, S. S.
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Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA
Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USAUniv Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA
Jaswal, S. S.
Tsymbal, Evgeny Y.
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Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA
Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USAUniv Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA