First-principles study on lanthanide dopants in BaTiO3

被引:0
|
作者
Lee, Hyungwoo [1 ]
Ouk, Minae [2 ]
Kim, Inseo [1 ]
Kim, Biyi [2 ]
Bae, Seok [2 ]
Roh, Sungwon David [2 ]
Tanaka, Isao [3 ]
Choi, Minseok [1 ]
机构
[1] Inha Univ, Dept Phys, Inchon 22212, South Korea
[2] LG Innotek Co Ltd, Future Technol Lab, R&D Ctr, Seoul 07796, South Korea
[3] Kyoto Univ, Dept Mat Sci & Engn, Sakyo, Kyoto 6068501, Japan
关键词
Compendex;
D O I
10.1016/j.cap.2024.10.002
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using first-principles calculation based on density-functional theory and density-functional perturbation theory, the microscopic structure and dielectric properties of Lanthanide (Ln) doped BaTiO3 3 are investigated. The doped Ln atoms exhibit significant displacement from Ba sites for charge compensation, forming off-centered configurations. This displacement is more pronounced for elements with smaller ionic radii. The change in ionic dielectric constant is strongly correlated with Ln displacement and Ln ion radius. As Ln displacement (ionic radius) increases (decreases), Ln-doped BaTiO3 3 has a higher ionic dielectric constant. However, regardless of the Ln species, the added Ln reduces the ionic dielectric constant compared to pristine BaTiO3. 3 .
引用
收藏
页码:238 / 241
页数:4
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