Analysis of the influence of the traps on the AlGaN/GaN MOSHEMT characteristics for low leakage power devices

AlGaN/GaN, Metal Oxide Semiconductor High Electron Mobility Transistors (MOSHEMTs) are very attractive for high-power, high-frequency, and high-temperature applications with low gate leakage current. However, charge trapping at the insulator/AlGaN interface is believed to limit the performance of AlGaN/GaN MOSHEMTs. This research investigates the trapping effects of technology computer aided design (TCAD), device simulation on "Silvaco" Software. Thus, it is obverse that changing the donor or acceptor traps density with trap energy at the HfAlO/AlGaN interface, which impacts the ID vs. VGS, ID vs. VDS, and transconductance characteristics curve. Moreover, it also influences the interface charge, 2DEG density, and Threshold Voltage (VTH). On the contrary, varying donor or acceptor trap energy does not illustrate a significant impact on the characteristics curve because both donor and acceptor traps are fully ionised. Eventually, it is summarised that the I vs. V characteristics curve of the AlGaN/GaN, MOSHEMT, is highly influenced by the effective positive charge density at the HfAlO/AlGaN interface.