UV-enhanced O2 sensing using β-Ga 2 O 3 nanowires at room temperature

被引：1
作者：
Cheng, Yi [1 ]
Wang, Wenqian [1 ]
Zhu, Fanghao [1 ]
Yu, Tao [1 ]
Zhang, Xizhen [1 ]
机构：
[1] Dalian Maritime Univ, Sch Sci, Dalian 116026, Liaoning, Peoples R China
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 2024年 / 379卷
关键词：
Oxygen vacancies; Photogenerated carrier; Gas sensors; Chemical vapor deposition; OXYGEN; FILMS; PHOTOLUMINESCENCE; NANOSTRUCTURES; PERFORMANCE; FABRICATION; SENSORS; GROWTH; NH3; O-2;
D O I：
10.1016/j.sna.2024.115997
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Oxygen sensors based on (3-Ga2O3 nanowires were prepared by a chemical vapor deposition method and investigated in detail. (3-Ga2O3 nanowires grew on sapphire substrate at 1100 degrees C with Au as a catalyst. The polycrystalline structure was confirmed according to the X-ray diffraction (XRD) patterns. Scanning electron microscope (SEM) images revealed the average diameter of the nanowires was 150 nm. The ratio of Ga to O was 0.765 according to energy dispersive spectroscopy (EDS) results. Photoluminescence emissions at 445 and 484 nm originated from oxygen vacancies and gallium-oxygen vacancy pairs. Both EDS results and photoluminescence revealed intrinsic oxygen vacancies in (3-Ga2O3 nanowires. We coated the (3-Ga2O3 nanowires on an interdigitated electrode to fabricated an oxygen sensor. Under ultraviolet light irradiation, at room temperature, the sensor's response rise time and recovery time were 1034 s and 1283 s to 600 ppm oxygen, those were 1290 s and 1709 s to 1200 ppm oxygen. The mechanism of oxygen sensing was discussed.
引用
收藏
页数：5
相关论文
共 42 条
[1]   NOx sensors based on semiconducting metal oxide nanostructures: Progress and perspectives [J].
Afzal, Adeel ;
Cioffi, Nicola ;
Sabbatini, Luigia ;
Torsi, Luisa .
SENSORS AND ACTUATORS B-CHEMICAL, 2012, 171 :25-42
[2]   Oxygen sensors based on gallium oxide thin films with addition of chromium [J].
Almaev, Aleksei, V ;
Chernikov, Evgeniy, V ;
Davletkildeev, Nadim A. ;
Sokolov, Denis, V .
SUPERLATTICES AND MICROSTRUCTURES, 2020, 139
[3]   Research on the structural and optical stability of Ga2O3 films deposited by electron beam evaporation [J].
Cheng, Yi ;
Yang, Kun ;
Peng, Yong ;
Yin, Yan ;
Chen, Jixiang ;
Jing, Bo ;
Liang, Hongwei ;
Du, Guotong .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013, 24 (12) :5122-5126
[4]   Influence of N2 and O2 annealing treatment on the optical bandgap of polycrystalline Ga2O3:Cu films [J].
Cheng, Yi ;
Liang, Hongwei ;
Liu, Yang ;
Xia, Xiaochuan ;
Shen, Rensheng ;
Song, Shiwei ;
Wu, Yunfeng ;
Du, Guotong .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2013, 16 (05) :1303-1307
[5]   Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal [J].
Cheng, Yi ;
Liang, Hongwei ;
Shen, Rensheng ;
Xia, Xiaochuan ;
Wang, Bo ;
Liu, Yuanda ;
Song, Shiwei ;
Liu, Yang ;
Zhang, Zhenzhong ;
Du, Guotong .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013, 24 (08) :2750-2754
[6]   Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition [J].
Farzana, Esmat ;
Alema, Fikadu ;
Ho, Wan Ying ;
Mauze, Akhil ;
Itoh, Takeki ;
Osinsky, Andrei ;
Speck, James S. .
APPLIED PHYSICS LETTERS, 2021, 118 (16)
[7]   Achieving fast oxygen response in individual β-Ga2O3 nanowires by ultraviolet illumination [J].
Feng, P. ;
Xue, X. Y. ;
Liu, Y. G. ;
Wan, Q. ;
Wang, T. H. .
APPLIED PHYSICS LETTERS, 2006, 89 (11)
[8]   MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties [J].
Feng, Zixuan ;
Bhuiyan, A. F. M. Anhar Uddin ;
Karim, Md Rezaul ;
Zhao, Hongping .
APPLIED PHYSICS LETTERS, 2019, 114 (25)
[9]   Study on oxygen vacancies in gallium oxide nanostructures [J].
Gou, Anqi ;
Cheng, Yi ;
Zhu, Fanghao ;
Yu, Tao ;
Yin, Hongming ;
Che, Li ;
Chen, Jixiang ;
Zhang, Xizhen .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2023, 34 (12)
[10]   Unveiling interface engineering dynamics between Ti and Ga2O3 nanowire [J].
Hsieh, Ping -Wen ;
Chi, Chong -Chi ;
Wu, Che-Ming ;
Hsiao, Kai -Yuan ;
Lu, Ming-Yen .
APPLIED SURFACE SCIENCE, 2024, 670
12345