A simulation study of plasmonic substrate for in-process measurement of refractive index in nano-stereolithography

被引:0
|
作者
Michihata M. [1 ]
Kong D. [2 ]
Takamasu K. [3 ]
Takahashi S. [1 ]
机构
[1] Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo
[2] Department of Advanced Interdisciplinary Studies, The University of Tokyo, 4-6-1 Komaba, Meguro-Ku, Tokyo
[3] Department of Precision Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo
来源
Michihata, Masaki (michihata@nanolab.t.u-tokyo.ac.jp) | 1600年 / Fuji Technology Press卷 / 11期
基金
日本学术振兴会;
关键词
In-process measurement; PLZT; Refractive index; Stereolithography; Surface plasmon resonance;
D O I
10.20965/ijat.2017.p0772
中图分类号
学科分类号
摘要
Functional surfaces are in demand for recent valueadded products. Stereolithography based on evanescent light has been proposed as a technique to fabricate surface nanostructures, but some fabrication error sources must be addressed. In-process measurement is an essential solution to improve the fabrication performance. For in-process measurement in stereolithography, the refractive index of resin is an inherent parameter for product and condition monitoring. This study proposes the in-processmeasurement of the refractive index of resin based on surface plasmon resonance (SPR). The optical phase response at SPR is highly sensitive to changes in the refractive index of resin but has a narrow sensing range. Therefore, we propose a substrate with a tunable sensing range using lanthanum-modified lead zirconate titanate (PLZT). The structural design was considered using numerical simulation. The SPR conditions were calculated with regard to thickness combinations of PLZT and metal (Ag) films. Depending on these combinations, a sensing range can be tuned on the order of 10-3 to 10-4 RIU with a sensitivity of 106 rad/RIU. However, to realize these performances, the manufacturing accuracy of Ag thin films must be better than 0.1 nm. © 2017, Fuji Technology Press. All rights reserved.
引用
收藏
页码:772 / 780
页数:8
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