Memory switching of chalcogenide glass Se85 Te15 X5 (x=In, Sn) films

被引：14

作者：

Hegab, N. A. ^{[1
]}

Farid, A. S. ^{[1
]}

El-Wahabb, E. Abd ^{[1
]}

Magdy, H. ^{[1
]}

机构：

[1] Ain Shams Univ, Phys Dept, Fac Educ, Cairo, Egypt

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2018年 / 743卷

关键词：

Chalcogenides; Electrical conductivity; Memory switching; GE-SE; AMORPHOUS-SEMICONDUCTORS; OPTICAL DISK; SYSTEM; CONDUCTIVITY; ALLOYS;

D O I：

10.1016/j.jallcom.2017.12.052

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Various factors as temperature, thickness and element addition effect on the electrical conductivity and switching phenomenon in Se-85 Te-15 X-5 (x = In, Sn) films was examined and discussed herein. Structural identification of the film compositions is confirmed by X-ray diffraction patterns (XRD), energy dispersive X-ray analysis (EDX) and differential thermal analysis (DTA). The obtained results of the temperature dependence of dc conductivity are explained in accordance with Mott and Davis model. The switching phenomenon obtained was of memory type. The mean value of the threshold voltage was found to be dependent on temperature, film thickness d and composition. Values of the threshold voltage activation energy (epsilon) over tilde (Vth) were obtained for the investigated compositions. The obtained results agree with the electrothermal model for the switching process. The addition of Sn to Se-Te system leads to a decrease in the studied parameters (T-g, Delta E-sigma, (V) over bar (th)) than that obtained for In addition which correlated with the nature of bonds between elements of the studied compositions. (C) 2018 Elsevier B.V. All rights reserved.

引用

页码：36 / 43

页数：8