Nanoscale structural and electrical evolution of Ta- and Ti-based contacts on AlGaN/GaN heterostructures

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[1] Greco, G.
[2] Giannazzo, F.
[3] Iucolano, F.
[4] Lo Nigro, R.
[5] Roccaforte, F.
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| 1600年 / American Institute of Physics Inc.卷 / 114期
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In this paper; the nanoscale structural and electrical evolution of Ta- and Ti-based contacts was investigated employing several analytical techniques. A correlation between the improvement of the electrical quality of the contacts and the formation of Al-alloyed phases (TaAl3 or TiAl3) during annealing was observed. However; while for the Ti/Al contacts an Ohmic behavior with a contact resistance Rc ∼ 1.8 Ω mm has been achieved after annealing at 500 °C; Ta/Al contacts exhibited a higher contact resistance (Rc ∼ 36.3 Ω·mm) even after annealing at 700 °C. The different electrical behaviour has been explained considering the different interface and the homogeneity of the current transport at a nanoscale level. © 2013 AIP Publishing LLC;
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