Quantum Transport Simulation of Ultrathin and Ultrashort Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors

被引：0
作者：
Tsuchiya, Hideaki [1 ]
Horino, Motoki [1 ]
Ogawa, Matsuto [1 ]
Miyoshi, Tanroku [1 ]
机构：
[1] Department of Electrical Engineering, Kobe University, Nada-ku, Kobe 657-8501, 1-1, Rokko-dai
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2003年 / 42卷 / 12期
关键词：
Ballistic transport; Nanoscale MOSFET; Quantum correction; Quantum Monte Carlo; Quantum transport; Wigner function;
D O I：
10.1143/jjap.42.7238
中图分类号：
学科分类号：
摘要：
The quantum transport properties of nanoscale silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) are investigated based on a quantum Monte Carlo (MC) device simulation. Quantum mechanical effects are incorporated in terms of a quantum correction of potential in well-developed particle MC computational techniques. The ellipsoidal multivalleys of the silicon conduction band are also considered in the simulation. First, the validity of the quantum MC technique is verified by comparing the simulated results with those calculated by a self-consistent Schrödinger-Poisson method at thermal equilibrium. Then, the nonequilibrium quantum transport characteristics of nanoscale SOI-MOSFETs are demonstrated. Furthermore, a quasi-ballistic behavior of ultrashort-channel devices is studied by evaluating the frequency of carrier scattering events in the channel region.
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页码：7238 / 7243
页数：5
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