Investigation and Classification of Short-Circuit Failure Modes Based on Three-Dimensional Safe Operating Area for High-Power IGBT Modules

被引：63

作者：

Chen, Yuxiang ^{[1
]}

Li, Wuhua ^{[1
]}

Iannuzzo, Francesco ^{[2
]}

Luo, Haoze ^{[1
,2
]}

He, Xiangning ^{[1
]}

Blaabjerg, Frede ^{[2
]}

机构：

[1] Zhejiang Univ, Coll Elect Engn, Hangzhou 310027, Zhejiang, Peoples R China

[2] Aalborg Univ, Energy Technol Dept, DK-9220 Aalborg, Denmark

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2018年 / 33卷 / 02期

基金：

中国国家自然科学基金;

关键词：

High power insulated-gate bipolar transistors (IGBTs); short-circuit failure mode; three-dimensional short-circuit safe operating area (3D-SCSOA); self-heating; temperature dependence; HIGH-VOLTAGE IGBTS; FIELD-STOP IGBTS; COLLECTOR DESIGN; TURN-OFF; RUGGEDNESS; AVALANCHE; DEVICES; LIMITATION; BEHAVIOR;

D O I：

10.1109/TPEL.2017.2682114

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Insulated-gate bipolar transistor (IGBT) shortcircuit failure modes have been under research for many years, successfully paving the way for device short-circuit ruggedness improvement. The aim of this paper is to classify and discuss recent contributions about IGBT short-circuit failure modes, in order to establish the current state of the art and trends in this area. First, the concept of 3-D safe operating area is proposed as the IGBT's operational boundary to divide the device short-circuit failure modes into short-circuit V-DC/V-rated-I-SC SOA limiting and short-circuit endurance time limiting groups. Then, the discussion is centered on currently reported IGBT short-circuit failure modes in terms of their relationships with the device 3-D short-circuit safe operating area (3D-SCSOA) characteristics. In addition, further investigation on the interaction of 3D-SCSOA characteristics is implemented to motivate advanced contributions in future dependence research of device short-circuit failure modes on temperature. Consequently, a comprehensive and thoughtful review of where the development of short-circuit failure mode research works of IGBT stands and is heading is provided.

引用

页码：1075 / 1086

页数：12