Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO2 interface

被引：0
|
作者：
机构：
[1] Gruber, G.
[2] Cottom, J.
[3] Meszaros, R.
[4] Koch, M.
[5] Pobegen, G.
[6] Aichinger, T.
[7] Peters, D.
[8] Hadley, P.
来源：
| 2018年 / American Institute of Physics Inc.卷 / 123期
关键词：
All Open Access; Green;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Silicon carbide
引用
收藏
相关论文
共 50 条
  • [21] Phosphorous passivation of the SiO2/4H-SiC interface
    Sharma, Y. K.
    Ahyi, A. C.
    Issacs-Smith, T.
    Shen, X.
    Pantelides, S. T.
    Zhu, X.
    Feldman, L. C.
    Rozen, J.
    Williams, J. R.
    SOLID-STATE ELECTRONICS, 2012, 68 : 103 - 107
  • [22] The Effects of Phosphorus at the SiO2/4H-SiC Interface
    Sharma, Y. K.
    Ahyi, A. C.
    Issacs-Smith, T.
    Shen, X.
    Pantelides, S. T.
    Zhu, X.
    Rozen, J.
    Feldman, L. C.
    Williams, J. R.
    Xu, Yi
    Garfunkel, E.
    SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 743 - +
  • [23] Investigation of carbon interstitials in the vicinity of the SiO2/4H-SiC(0001) interface
    Alsnani, Hind
    Goss, J. P.
    Al-Ani, Oras
    Olsen, S. H.
    Briddon, P. R.
    Rayson, M. J.
    Horsfall, A. B.
    CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 2018, : 231 - 234
  • [24] Sodium enhanced oxidation of Si-face 4H-SiC:a method to remove near interface traps
    Sveinbjoernsson, E. O.
    Allerstam, F.
    Olafsson, H. O.
    Gudjonsson, G.
    Dochev, D.
    Roedle, T.
    Jos, R.
    SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 487 - +
  • [25] Electron-spin-resonance and electrically detected-magnetic-resonance characterization on P bC center in various 4H-SiC(0001)/SiO2 interfaces
    Umeda, T.
    Nakano, Y.
    Higa, E.
    Okuda, T.
    Kimoto, T.
    Hosoi, T.
    Watanabe, H.
    Sometani, M.
    Harada, S.
    Journal of Applied Physics, 2020, 127 (14):
  • [26] Electrically active traps at the 4H-SiC/SiO2 interface responsible for the limitation of the channel mobility
    Bassler, M
    Afanas'ev, VV
    Pensl, G
    Schulz, M
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1065 - 1068
  • [27] Electrically active traps at the 4H-SiC/SiO2 interface responsible for the limitation of the channel mobility
    Bassler, M.
    Afanas'ev, V.V.
    Pensl, G.
    Schulz, M.
    Materials Science Forum, 2000, 338
  • [28] Evidence of Trigonal Dangling Bonds at the Ge(111)/Oxide Interface by Electrically Detected Magnetic Resonance
    Paleari, S.
    Baldovino, S.
    Molle, A.
    Fanciulli, M.
    PHYSICAL REVIEW LETTERS, 2013, 110 (20)
  • [29] Mechanism of Heteroepitaxial Growth of Boron Carbide on the Si-Face of 4H-SiC
    Benamra, Yamina
    Auvray, Laurent
    Andrieux, Jerome
    Cauwet, Francois
    Gutierrez, Marina
    Lloret, Fernando
    Araujo, Daniel
    Bachelet, Romain
    Canut, Bruno
    Ferro, Gabriel
    CRYSTAL GROWTH & DESIGN, 2025, 25 (05) : 1506 - 1513
  • [30] On-axis homoepitaxial growth on Si-face 4H-SiC substrates
    Hassan, J.
    Bergman, J. P.
    Henry, A.
    Janzen, E.
    JOURNAL OF CRYSTAL GROWTH, 2008, 310 (20) : 4424 - 4429
12345