Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO2 interface

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机构：
[1] Gruber, G.
[2] Cottom, J.
[3] Meszaros, R.
[4] Koch, M.
[5] Pobegen, G.
[6] Aichinger, T.
[7] Peters, D.
[8] Hadley, P.
来源：
| 2018年 / American Institute of Physics Inc.卷 / 123期
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All Open Access; Green;
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摘要：
Silicon carbide
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