CMOS scaling and beyond

被引：0
|
作者：
Kikkawa, Takamaro [1 ]
Lai, Jordan [2 ]
机构：
[1] Hiroshima University
[2] Taiwan Semiconductor Manufacturing Company
来源：
Proceedings of the Custom Integrated Circuits Conference | 2009年
关键词：
D O I：
10.1109/CICC.2009.5280902
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Scaling CMOS to the limit - Preface
    Solomon, PM
    IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2002, 46 (2-3) : 119 - 120
  • [42] CMOS scaling into the nanometer regime
    Taur, Y
    Buchanan, DA
    Chen, W
    Frank, DJ
    Ismail, KE
    Lo, SH
    SaiHalasz, GA
    Viswanathan, RG
    Wann, HJC
    Wind, SJ
    Wong, HS
    PROCEEDINGS OF THE IEEE, 1997, 85 (04) : 486 - 504
  • [43] Scaling, power, and the future of CMOS
    Horowitz, M
    Alon, E
    Patil, D
    Naffziger, S
    Kumar, R
    Bernstein, K
    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST, 2005, : 11 - 17
  • [44] Are we at the end of CMOS scaling?
    Shahidi, Ghavam G.
    Frontiers in Electronics, 2006, 41 : 3 - 8
  • [45] CMOS SCALING: WHERE TO NEXT?
    Crabbé, Emmanuel
    Electronic Device Failure Analysis, 2022, 24 (03):
  • [46] Scaling CMOS: materials & devices
    Brown, G. A.
    Zeitzoff, P. M.
    Bersuker, G.
    Huff, H. R.
    MATERIALS TODAY, 2004, 7 (01) : 20 - 25
  • [47] SOI BEYOND CMOS
    Marczewski, J.
    2008 MIKON CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2008, : 288 - 296
  • [48] Beyond CMOS Technology
    Tonti, William
    2012 IEEE TECHNOLOGY TIME MACHINE SYMPOSIUM (TTM), 2012,
  • [49] CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics
    Wu, E.Y. (eywu@us.ibm.com), 1600, IBM Corporation (46): : 2 - 3
  • [50] CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics
    Wu, EY
    Nowak, EJ
    Vayshenker, A
    Lai, WL
    Harmon, DL
    IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2002, 46 (2-3) : 287 - 298
12345