Shape control of trenched 4H-SiC C-face by thermal chlorine etching

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Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-0192, Japan [1 ]
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Jpn. J. Appl. Phys. | 1600年 / 5 PART 1卷
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Number:; 23560367; Acronym: [!text type='JS']JS[!/text]PS; Sponsor: Japan Society for the Promotion of Science;
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摘要：
Etching
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