Effects of Excess Bismuth on Structure and Properties of SrBi4 Ti4 O15 Ceramics

被引:0
作者
Suhua, Fan [1 ,2 ]
Wen, Chen [1 ]
Fengqing, Zhang [2 ]
Guangda, Hu [3 ]
机构
[1] College of Materials Science and Engineering, Wuhan Technology University, Wuhan
[2] College of Materials Science and Engineering, Shandong Jianzhu University, Jinan
[3] College of Materials Science and Engineering, Jinan University, Jinan
来源
Journal of Rare Earths | 2007年 / 25卷 / SUPPL. 2期
基金
中国国家自然科学基金;
关键词
dielectric properties; excess bismuth contents; ferroelectric properties; O482; sol-gel method;
D O I
10.1016/S1002-0721(07)60494-3
中图分类号
学科分类号
摘要
SrBi4Ti4O15(SBTi) ferroelectric ceramics with excess bismuth (Bi) contents ranging from 0% to 25% were prepared by sol-gel method. Effects of excess Bi contents on the microstructure and electric properties were investigated. The SBTi ceramics sample with 10% of excess Bi showed a pure layered perovskite structure with enhancee electric properties. Its Curie temperature, relative dielectric constant, dielectric loss, remanent polarization (2Pr) and coercive field (2Ec) were 518 °C, 248, 0.0021, 20.5 μC·cm-2and 87.8 kV · cm-1, respectively. The degraded electric properties observed in SBTi ceramics with excess bismuth contents lower or higher than 10% could be attributed to the structure defects and the formation of a second phase. © 2007 The Chinese Society of Rare Earths.
引用
收藏
页码:317 / 321
页数:4
相关论文
共 50 条
  • [31] Synthesis and properties of high aspect ratio SrBi4Ti4O15 microplatelets
    Chang, Yunfei
    Wu, Jie
    Yang, Bin
    Zhang, Shantao
    Lv, Tianquan
    Cao, Wenwu
    MATERIALS LETTERS, 2014, 129 : 126 - 129
  • [32] Effect of Sm and Na substitution on dielectric properties of SrBi4Ti4O15
    Ravikiran, U.
    Sarah, P.
    Suresh, M. Buchi
    Zacharias, Elizabeth
    FERROELECTRICS, 2018, 537 (01) : 237 - 245
  • [33] Impedance spectroscopy and morphology of SrBi4Ti4O15 ceramics prepared by soft chemical method
    Rout, S. K.
    Hussian, Ali
    Lee, J. S.
    Kim, I. W.
    Woo, S. I.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 477 (1-2) : 706 - 711
  • [34] Dielectric and piezoelectric properties of SrBi4-xHoxTi4O15 (x=0.00, 0.02, 0.04 and 0.06) ceramics
    Mamatha, B.
    James, A. R.
    Sarah, P.
    PHYSICA B-CONDENSED MATTER, 2010, 405 (23) : 4772 - 4775
  • [35] Properties of tungsten-doped Bi4Ti3O12-SrBi4Ti4O15 intergrowth ferroelectrics
    Wang, Wei
    Zhu, Jun
    Mao, Xiang-Yu
    Chen, Xiao-Bing
    MATERIALS RESEARCH BULLETIN, 2007, 42 (02) : 274 - 280
  • [36] Dielectric and ferroelectric properties of BaBi4Ti4O15 ceramics and their dependence on lattice structure
    Li, ZF
    Zhong, WL
    Qiu, ZP
    Ge, HL
    Zhang, PL
    Wang, CL
    ACTA PHYSICA SINICA, 2004, 53 (09) : 3200 - 3204
  • [37] Structural and electrical investigation of rare-earth doped lead-free SrBi4Ti4O15 ceramics
    Rajashekhar, G.
    Sreekanth, T.
    INDIAN JOURNAL OF PHYSICS, 2024, 98 (09) : 3243 - 3250
  • [38] Electrical properties of niobium doped Bi4Ti3O12-SrBi4Ti4O15 intergrowth feffoelectrics
    Parida, Geetanjali
    Bera, J.
    CERAMICS INTERNATIONAL, 2014, 40 (02) : 3139 - 3144
  • [39] Structural, electrical and photoluminescence properties of Er3+-doped SrBi4Ti4O15Bi4Ti3O12 inter-growth ceramics
    Liu, Fang
    Jiang, Xiangping
    Chen, Chao
    Nie, Xin
    Huang, Xiaokun
    Chen, Yunjing
    Hu, Hao
    Su, Chunyang
    FRONTIERS OF MATERIALS SCIENCE, 2019, 13 (01) : 99 - 106
  • [40] Effect of Nd modification on electrical properties of mixed-layer Aurivillius phase Bi4Ti3O12-SrBi4Ti4O15
    Wang, Wei
    Gu, Shi-Pu
    Mao, Xiang-Yu
    Chen, Xiao-Bing
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (02)