Structural properties of gadolinium orthoniobate and orthotantalate thin films prepared by sol-gel method

被引：5

作者：

Brunckova, Helena ^{[1
]}

Medvecky, Lubomir ^{[1
]}

Mudra, Erika ^{[1
]}

Kovalcikova, Alexandra ^{[1
]}

Girman, Vladimir ^{[2
]}

机构：

[1] Slovak Acad Sci, Inst Mat Res, Watsonova 47, Kosice 04001, Slovakia

[2] Pavol Jozef Safarik Univ, Fac Sci, Jesenna 566-5, Kosice 04001, Slovakia

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2018年 / 735卷

关键词：

GdNbO4; GdTaO4; Sol-gel process; Thin films; Polymorphs; ENHANCED LUMINESCENCE; ELECTRICAL-PROPERTIES; CRYSTAL-STRUCTURE; PHOSPHORS; MICROSTRUCTURE; NANOCRYSTALS; CERAMICS; GDNBO4; NDTAO4; LAYER;

D O I：

10.1016/j.jallcom.2017.11.209

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Gadolinium orthoniobate GdNbO4 (GNO) and orthotantalate GdTaO4 (GTO) thin films (similar to 100 nm) were prepared by sol-gel/spin-coating process on Al2O3 substrates with Pb(Zr0.52Ti0.48) O-3 (PZT) interlayer and annealing at 1000 degrees C. The precursors of films were synthesized using Nb or Ta tartrate complexes. We also report for the first time the FTIR, Raman spectra and morphology of tartrate GNO and GTO precursors annealed at various temperatures. The different phase transformation was determined in GNO or GTO precursors from fluorite T0-structure via orthorhombic O-GdNbO4 or cubic C-GdTa7O19 to monoclinic M-GdNbO4 or M'-GdTaO4 during annealing at 800-1200 degrees C. XRD results of GNO or GTO films confirmed the coexistence of M-GdNbO4 or M'-GdTaO4 phase in addition to O-GdNbO4 (in GNO) or C-GdTa7O19 (in GTO) as main phase at 1000 degrees C. The surface morphology and topography of thin films were investigated by the SEM and AFM analysis. GNO film was smoother with roughness of 7.31 nm in comparison with GTO (3.53 nm). The results of this work can contribute to the formation different polymorphs of these films for the application to environmental electrolytic thin film devices. (C) 2017 Elsevier B. V. All rights reserved.

引用

页码：1111 / 1118

页数：8