Molecular beam epitaxy growth and optical properties of high bismuth content GaSb1-xBix thin films

被引：0

作者：

机构：

[1] [1,Yue, Li

[2] 2,Chen, Xiren

[3] 1,2,Zhang, Yanchao

[4] 1,2,Zhang, Fan

[5] 1,2,Wang, Lijuan

[6] Shao, Jun

[7] 1,2,Wang, Shumin

来源：

Wang, Shumin (Shumin@mail.sim.ac.cn) | 1600年 / Elsevier Ltd卷 / 742期

关键词：

Number:; 2014CB643902; Acronym:; -; Sponsor:; 2017YFB0405300; Number: 61334004,61404152, Acronym: NSFC, Sponsor: National Natural Science Foundation of China, Number: -, Acronym: NSFC, Sponsor: National Natural Science Foundation of China, Number: -, Acronym: CAS, Sponsor: Chinese Academy of Sciences, Number: -, Acronym: VR, Sponsor: Vetenskapsrådet, Number: KGZD-EW-804, Acronym: -, Sponsor: Key Research Program of Frontier Science, Chinese Academy of Sciences, Number: -, Acronym: -, Sponsor: Key Research Program of Frontier Science, Chinese Academy of Sciences,;

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共 3 条

[1] Crack healing during molecular-beam-epitaxy growth of GaP/GaAs thin films
Niewczas, M. (niewczas@mcmaster.ca), 1600, American Institute of Physics Inc. (98):
[2] Layer by layer growth of BaTiO3 thin films with extremely smooth surfaces by laser molecular beam epitaxy
Inst of Physics, Beijing, China
J Cryst Growth, 1-2 (67-73):
[3] Growth of CdS/ZnS strained layer superlattices on GaAs(0 0 1) by molecular-beam epitaxy with special reference to their structural properties and lattice dynamics
Institut für Angewandte Physik, Univ. Karlsruhe, K., Karlsruhe, Germany
不详
J Cryst Growth, 3 (391-398):

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