Raman study of Zn1-xBexSe/GaAs systems with low Be content (x≤0.20)

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作者：
Pagès, O. [1 ]
Ajjoun, M. [1 ]
Bormann, D. [2 ]
Chauvet, C. [3 ]
Tournié, E. [3 ]
Faurie, J.P. [3 ]
Gorochov, O. [4 ]
机构：
[1] Institut de Physique, Université de Metz, 1 Boulevard Arago, 57078 Metz, France
[2] Laboratoire de Physico-Chimie des Interfaces et Applications, Université d'Artois, Rue Jean Souvraz, 62037 Lens, France
[3] Centre de Recherche sur l'Hétéroépitaxie et Ses Applications, Centre National de la Recherche Scientifique (CRHEA-CNRS), Sophia Antipolis, Rue Bernard Gregory, 06560 Valbonne, France
[4] Laboratoire de Physique des Solides et de Cristallogénèse, Centre National de la Recherche Scientifique (LPSC-CNRS), 1 place A. Briand, 92195 Meudon, France
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| 1600年 / American Institute of Physics Inc.卷 / 91期
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