AlGaN/GaN high electron mobility transistor with thin buffer layers

被引：0

作者：

Ao, Jin-Ping ^{[1
]}

Wang, Tao ^{[2
]}

Kikuta, Daigo ^{[3
]}

Liu, Yu-Huai ^{[1
]}

Sakai, Shiro ^{[3
]}

Ohno, Yasuo ^{[3
]}

机构：

[1] Satellite Venture Business Lab., The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan

[2] Dept. of Elec. and Electronic Eng., The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan

[3] Nitride Semiconductor Co., Ltd., 115-7 Itayajima, Akinokami, Seto-cho, Naruto, Tokushima 771-0360, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2003年 / 42卷 / 4 A期

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页码：1588 / 1589