Variation of Gilbert damping constant via interface induced magnetic anisotropy in LSMO/PMN-PT heterostructures

被引:0
|
作者
Das, Avisek [1 ]
Mrinalini [1 ]
Usami, Takamasa [2 ]
Pati, Satya Prakash [2 ]
Komori, Sachio [2 ]
Taniyama, Tomoyasu [2 ]
Gorige, Venkataiah [1 ]
机构
[1] Univ Hyderabad, Sch Phys, Hyderabad 500046, Telangana, India
[2] Nagoya Univ, Dept Phys, Nagoya 4648602, Japan
关键词
Magnetoelectrics; Heterostructures; Magnetic anisotropy; Gilbert damping constant; Spintronics; MAGNETORESISTANCE; STRAIN;
D O I
10.1016/j.jallcom.2024.176866
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The field of spintronics is emerging at blistering pace due to its promising room-temperature applications in lowpower logic-based devices. In this work, we investigate the suitability of ferromagnetic (FM) La0.7Sr0.3MnO3 (LSMO) thin film/ferroelectric (FE) Pb(Mg0.33Nb0.67)O3-PbTiO3 (PMN-PT) heterostructures for spintronic device applications through characterizing the static and dynamic magnetic properties. Due to the magnetoelastic coupling at the interface, LSMO/PMN-PT(001) is found to exhibit a 4-fold symmetry of magnetic anisotropy, while LSMO/PMN-PT(111) shows isotropic behavior at room temperature. The direction dependent Gilbert damping constant (alpha) estimated for the LSMO/PMN-PT(001) sample clearly shows that its values are smaller along the magnetically hard axis than along the easy axis, while no significant variation is observed for the LSMO/PMN-PT(111) sample. The electric field induced variation of alpha also demonstrate that the Gilbert damping is closely related to the magnetic anisotropy. The present results clearly indicate that it will be possible to realize electric field controlled spin dynamics in FM/FEs to develop futuristic spintronic devices.
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页数:8
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