Temperature dependent current-voltage characteristics of Au/n-type Ge Schottky barrier diodes with graphene interlayer

被引：0
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作者：
Khurelbaatar, Zagarzusem [1 ,2 ]
Kang, Min-Sung [1 ]
Shim, Kyu-Hwan [1 ]
Yun, Hyung-Joong [1 ,3 ]
Lee, Jouhan [3 ]
Hong, Hyobong [4 ]
Chang, Sung-Yong [5 ]
Lee, Sung-Nam [6 ]
Choi, Chel-Jong [1 ]
机构：
[1] School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju,561-756, Korea, Republic of
[2] School of Information and Communication Technology, Mongolian University of Science and Technology, Ulaanbaatar,51-29, Mongolia
[3] Division of Material Science, Korea Basic Science Institute, Daejeon,305-806, Korea, Republic of
[4] IT Convergence Research Lab., Electronics and Telecommunications Research Institute (ETRI), Daejeon,307-700, Korea, Republic of
[5] Power Generation Lab., Korea Electric Power Research Institute (KEPRI), Daejeon,305-380, Korea, Republic of
[6] Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung,429-793, Korea, Republic of
来源：
Journal of Alloys and Compounds | 2015年 / 650卷
关键词：
This research was supported by a grant from the R&D Program (Grant no. 10045216 ) for Industrial Core Technology funded by the Ministry of Trade; Industry and Energy (MOTIE); Republic of Korea; and by Converging Research Center Program ( 2014M3C1A8048834 ) through the Ministry of Science; ICT & Future Planning; Republic of Korea . It was also financially supported by Basic Science Research Program ( NRF-2015R1A6A1A04020421 ) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education;
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页码：658 / 663
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