Analytical Models of Subthreshold Current and Subthreshold Slope for Symmetrical Triple-Material Double-Gate s-Si MOSFETs

被引：0
作者：
Xin Y.-H. [1 ]
Yuan H.-C. [2 ]
Xin Y. [1 ]
机构：
[1] Department of Information and Engineering, North China University of Water Resources and Electric Power, Zhengzhou, 450046, Henan
[2] Department of Mathematics and Information Science, North China University of Water Resources and Electric Power, Zhengzhou, 450046, Henan
[3] Water Conservancy Survey and Design Institute, Dezhou, 253014, Shandong
来源：
| 2018年 / Chinese Institute of Electronics卷 / 46期
关键词：
Strained-Si; Subthreshold current; Subthreshold slope; Triple-material double-gate;
D O I：
10.3969/j.issn.0372-2112.2018.11.026
中图分类号：
学科分类号：
摘要：
The surface potential analytical solution is derived by Poisson equation and the boundary condition for symmetrical triple-material (TM) double-gate (DG) strained-Si (s-Si) MOSFETs. Two-dimensional analytical models of subthreshold current and subthreshold slope are proposed from subthreshold current density equation based on the diffusion-drift theory. Effects of device parameters on subthreshold characteristics have been discussed and the physical mechanism has been explained. The parameters include channel length, work function difference, Ge mole fraction, permittivity of gate dielectric, strained Si film thickness, high-k layer thickness and channel doping concentration. The improvement of the subthreshold performance has been studied, which provides significant guidance to optimize the device parameters. The analytical models agree well with simulation using DESSIS. © 2018, Chinese Institute of Electronics. All right reserved.
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页码：2768 / 2772
页数：4
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