共 50 条
[42]
Boron-carbide p-type layer for amorphous silicon solar cells
[J].
SURFACES, VACUUM, AND THEIR APPLICATIONS,
1996, (378)
:395-399
[43]
The radiation-induced defects production in p-type silicon doped by impurities of transitional elements
[J].
RADIATION EFFECTS AND DEFECTS IN SOLIDS,
2000, 152 (03)
:171-180
[45]
THERMALLY INDUCED DEFECTS IN N-TYPE AND P-TYPE SILICON
[J].
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,
1973, 20 (02)
:601-610
[48]
SHALLOW DEFECT LEVELS IN NEUTRON-IRRADIATED EXTRINSIC P-TYPE SILICON
[J].
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY,
1977, 22 (10)
:1241-1242
[49]
Defect spectroscopy of proton-irradiated thin p-type silicon sensors
[J].
2016 16TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS),
2016,
[50]
RADIATION DEFECTS IN P-TYPE SILICON IRRADIATED WITH 30 MEV PROTONS
[J].
SOVIET PHYSICS SEMICONDUCTORS-USSR,
1977, 11 (11)
:1278-1280