Depth distribution of lattice damage-related DI and D II defects after ion implantation and annealing of 6H-SiC

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Koshka, Yaroslav ^{[1
]}

Melnychuck, Galyna ^{[1
]}

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[1] Department of Electrical and Computer Engineering, Mississippi State University, Box 9571, Mississippi State, MS 39762, United States

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页码：513 / 516