Enhancing Superconductor Critical Temperature Prediction: A Novel Machine Learning Approach Integrating Dopant Recognition

被引:0
|
作者
Zhong, Chengquan [1 ,2 ]
Wang, Yuelin [1 ,2 ]
Long, Yanwu [1 ,2 ]
Liu, Jiakai [1 ,2 ,3 ]
Hu, Kailong [1 ,2 ]
Zhang, Jingzi [1 ,4 ]
Chen, Junjie [4 ]
Lin, Xi [1 ,2 ]
机构
[1] Harbin Inst Technol, Sch Mat Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China
[2] Harbin Inst Technol, Blockchain Dev & Res Inst, Shenzhen 518055, Guangdong, Peoples R China
[3] Sunrise Xiamen Photovolta Ind Co Ltd, Xiamen 361006, Fujian, Peoples R China
[4] Harbin Inst Technol, Sch Comp Sci & Technol, Shenzhen 518055, Peoples R China
关键词
machine learning; Mixture of Experts; deeplearning; superconductor; dopant materials; CRYSTAL-STRUCTURE; COMPLEX;
D O I
10.1021/acsami.4c11997
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Doping plays a crucial role in determining the critical temperature (T c) of superconductors, yet accurately predicting its effects remains a significant challenge. Here, we introduce a novel doping descriptor that captures the complex influence of dopants on superconductivity. By integrating the doping descriptor with elemental and physical features within a Mixture of Experts (MoE) model, we achieve a remarkable R 2 of 0.962 for T c prediction, surpassing all published prediction models. Our approach successfully identifies optimal doping levels in the Bi2-x Pb x Sr2Ca2-y Cu y O z system, with predictions closely aligning with experimental results. Leveraging this model, we screen compounds from the Inorganic Crystal Structure Database and employ a generative approach to explore new doped superconductors. This process reveals 40 promising candidates for high T c superconductivity among existing and hypothetical doped materials. By explicitly accounting for doping effects, our method offers a powerful tool for guiding the experimental discovery of new superconductors, potentially accelerating progress in high-temperature superconductivity research and opening new avenues for material design.
引用
收藏
页码:60472 / 60481
页数:10
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