Progress of research on modified oxide semiconductor gas sensor

被引：0

作者：

Zhu, Qin ^{[1
]}

Zhang, Yu-Min ^{[1
]}

Hu, Chang-Yi ^{[2
]}

Zhang, Jin ^{[1
]}

Liu, Qing-Ju ^{[1
]}

机构：

[1] Yunnan Key Laboratory of Nanomaterials and Technology, Yunnan University, Kunming

[2] The State Key Laboratory of Advanced Technologies for Comprehensive Utilization of Platinum Metals, Kunming

来源：

Gongneng Cailiao/Journal of Functional Materials | 2014年 / 45卷 / 17期

关键词：

Gas sensor; Modified; Oxide semiconductor; Research progress;

D O I：

10.3969/j.issn.1001G9731.2014.17.003

中图分类号：

学科分类号：

摘要：

Oxide semiconductor gas sensor possesses exceptional properties such as high sensitivity, low cost, simple method of measurement and convenience of use, which has great utilization potentiality in the aspect of the real-time detection of toxic and harmful gases. In this paper, the research progress, the existing problems, and the development trends of modified metal oxide semiconductor gas sensor was summarized.

引用

页码：17017 / 17021

页数：4

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