Progress of research on modified oxide semiconductor gas sensor

被引:0
作者
机构
[1] Yunnan Key Laboratory of Nanomaterials and Technology, Yunnan University, Kunming
[2] The State Key Laboratory of Advanced Technologies for Comprehensive Utilization of Platinum Metals, Kunming
来源
Liu, Qing-Ju | 1600年 / Journal of Functional Materials卷 / 45期
关键词
Gas sensor; Modified; Oxide semiconductor; Research progress;
D O I
10.3969/j.issn.1001G9731.2014.17.003
中图分类号
学科分类号
摘要
Oxide semiconductor gas sensor possesses exceptional properties such as high sensitivity, low cost, simple method of measurement and convenience of use, which has great utilization potentiality in the aspect of the real-time detection of toxic and harmful gases. In this paper, the research progress, the existing problems, and the development trends of modified metal oxide semiconductor gas sensor was summarized.
引用
收藏
页码:17017 / 17021
页数:4
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