Progress of research on modified oxide semiconductor gas sensor

被引：0
|
作者：
机构：
[1] Zhu, Qin
[2] Zhang, Yu-Min
[3] Hu, Chang-Yi
[4] Zhang, Jin
[5] Liu, Qing-Ju
来源：
Liu, Qing-Ju | 1600年 / Journal of Functional Materials卷 / 45期
关键词：
MOS devices - Chemical sensors - Metallic compounds - Gas detectors - Metals - Gases;
D O I：
10.3969/j.issn.1001G9731.2014.17.003
中图分类号：
学科分类号：
摘要：
Oxide semiconductor gas sensor possesses exceptional properties such as high sensitivity, low cost, simple method of measurement and convenience of use, which has great utilization potentiality in the aspect of the real-time detection of toxic and harmful gases. In this paper, the research progress, the existing problems, and the development trends of modified metal oxide semiconductor gas sensor was summarized.
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