Conduction characteristics of N-Al codoping p-ZnO films by XPS

被引：0

作者：

Zhang, Zi-Cai ^{[1
]}

Yu, Wei ^{[2
]}

Zhang, Kun ^{[1
]}

Teng, Xiao-Yun ^{[2
]}

Fu, Guang-Sheng ^{[2
]}

机构：

[1] Industrial and Commercial College, Hebei University, Baoding 071002, China

[2] College of Physics Science and Technology, Hebei University, Baoding 071002, China

来源：

Rengong Jingti Xuebao/Journal of Synthetic Crystals | 2011年 / 40卷 / 05期

关键词：

Aluminum oxide - Metallic films - Zinc oxide - Hole concentration - Hole mobility - Hall mobility - II-VI semiconductors - Alumina;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The ZnAlO:N films was prepared on α-Al2O3 substrates by the technique of helicon-wave-plasma assisted sputtering deposition. The as-grown ZnAlO:N film behaved n-type conduction at room temperature, but transformed into p-type conduction after annealed at 550°C in an O2 flow. The p-type ZnAlO:N film has a hole concentration of 2.1×1016 cm-3 and a Hall mobility of 5 cm2/V&middots. X-ray photoelectron spectroscopy measurment indicated that substitution of N for O site is in forms of N atom (N)O and N molecule (N2)O for the ZnAlO:N films, and the conduction transition for the annealed ZnAlO:N film induced by the (N2)O donors decreased and the concentration of (N)O defect becomes dominant.

引用

页码：1199 / 1202