Commercial Gan devices for switching and low noise applications

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作者：
Cree Inc., Research Triangle Park, NC 27709, United States [1 ]
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来源：
Int. Conf. Compd. Semicond. Manuf. Technol., CS MANTECH | 2011年
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Compilation and indexing terms; Copyright 2024 Elsevier Inc;
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摘要：
Gallium nitride - III-V semiconductors - Light amplifiers - Wide band gap semiconductors - High electron mobility transistors - Energy gap - Silicon carbide - Military applications - Monolithic microwave integrated circuits
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