Oxygen-induced barrier failure in Ti-based self-formed and Ta/TaN barriers for Cu interconnects

被引:0
|
作者
Department of Materials Science and Engineering, Kyoto University, Kyoto 606-8501, Japan [1 ]
不详 [2 ]
机构
来源
Jpn. J. Appl. Phys. | / 4 PART 2卷
关键词
Compendex;
D O I
04DB06
中图分类号
学科分类号
摘要
Oxygen
引用
收藏
相关论文
共 18 条
  • [1] Oxygen-Induced Barrier Failure in Ti-Based Self-Formed and Ta/TaN Barriers for Cu Interconnects
    Ito, Kazuhiro
    Kohama, Kazuyuki
    Hamasaka, Keiji
    Sonobayashi, Yutaka
    Sasaki, Nobuharu
    Shirai, Yasuharu
    Murakami, Masanori
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (04)
  • [2] Structure Analyses of Ti-Based Self-Formed Barrier Layers
    Kohama, Kazuyuki
    Ito, Kazuhiro
    Sonobayashi, Yutaka
    Ohmori, Kazuyuki
    Mori, Kenichi
    Maekawa, Kazuyoshi
    Shirai, Yasuharu
    Murakami, Masanori
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (04)
  • [3] Structure analyses of Ti-based self-formed barrier layers
    Department of Materials Science and Engineering, Kyoto University, Kyoto 606-8501, Japan
    不详
    不详
    Jpn. J. Appl. Phys., 4 PART 2
  • [4] Performance of Cu Dual-Damascene Interconnects Using a Thin Ti-Based Self-Formed Barrier Layer for 28 nm Node and Beyond
    Ohmori, Kazuyuki
    Mori, Kenichi
    Maekawa, Kazuyoshi
    Kohama, Kazuyuki
    Ito, Kazuhiro
    Ohnishi, Takashi
    Mizuno, Masao
    Asai, Koyu
    Murakami, Masanori
    Miyatake, Hiroshi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (05) : 05FD011 - 05FD014
  • [5] Application Of Ti-Based Self-Formation Barrier Layers To Cu Dual-Damascene Interconnects
    Ito, Kazuhiro
    Ohmori, Kazuyuki
    Kohama, Kazuyuki
    Mori, Kenichi
    Maekawa, Kazuyoshi
    Asai, Koyu
    Murakami, Masanori
    STRESS-INDUCED PHENOMENA IN METALLIZATION, 2010, 1300 : 91 - +
  • [6] Self-Formed Ti-Rich Barrier Layers in Cu(Ti)/Low-k Samples
    Ito, Kazuhiro
    Kohama, Kazuyuki
    Mori, Kenichi
    Maekawa, Kazuyoshi
    Murakami, Masanori
    STRESS-INDUCED PHENOMENA IN METALLIZATION, 2009, 1143 : 118 - +
  • [7] Control of Resistance by Oxide on the Surface of Cu Interconnects With CuSiN and Ti-based Barrier Metal
    Hayashi, Yumi
    Matsunaga, Noriaki
    Wada, Makoto
    Nakao, Shinichi
    Watanabe, Kei
    Kato, Satoshi
    Sakata, Atsuko
    Kajita, Akihiro
    Shibata, Hideki
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (01) : 42 - 48
  • [8] Cosputtered Cu/Ti Bonded Interconnects With a Self-Formed Adhesion Layer for Three-Dimensional Integration Applications
    Hsu, Sheng-Yao
    Chen, Hsiao-Yu
    Chen, Kuan-Neng
    IEEE ELECTRON DEVICE LETTERS, 2012, 33 (07) : 1048 - 1050
  • [9] Cu Wire Resistance Improvement using Mn-based Self-Formed Barriers
    Siew, Y. K.
    Jourdan, N.
    Ciofi, I.
    Croes, K.
    Wilson, C. J.
    Tang, B. J.
    Demuynck, S.
    Wu, Z.
    Ai, H.
    Cellier, D.
    Cockburn, A.
    Bommels, J.
    Tokei, Zs.
    2014 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE / ADVANCED METALLIZATION CONFERENCE (IITC/AMC), 2014, : 311 - 313
  • [10] Oxygen-Induced Mechanical Property Variations of Rapidly Solidified Ti-Based Bulk Metallic Composites
    Zhao, R. F.
    Li, L. Y.
    Wang, J.
    Li, J. S.
    JOURNAL OF MATERIALS ENGINEERING AND PERFORMANCE, 2019, 28 (09) : 5793 - 5796