共 50 条
- [1] Improved luminescence quality with an asymmetric confinement potential in Si-based type-II quantum wells grown on a graded SiGe relaxed buffer JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03): : 2387 - 2390
- [4] BAND-EDGE PHOTOLUMINESCENCE OF SIGE STRAINED-SI SIGE TYPE-II QUANTUM-WELLS ON SI(100) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (10A): : L1391 - L1393
- [6] Photoluminescence study of Si/SiGe multiple quantum wells grown by MBE J Cryst Growth, pt 2 (1144-1151):
- [8] Photoluminescence and Raman study of a tensilely strained Si type-II quantum well on a relaxed SiGe graded buffer SEMICONDUCTOR NANOSTRUCTURES TOWARDS ELECTRONIC AND OPTOELECTRONIC DEVICE APPLICATIONS II (SYMPOSIUM K, E-MRS 2009 SPRING MEETING), 2009, 6
- [9] Si/SiGe FETs grown by MBE on a LEPECVD grown virtual substrate MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 89 (1-3): : 368 - 372
- [10] Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2002, 16 (28-29): : 4228 - 4233