Overcoming the Open-Circuit Voltage Losses in Narrow Bandgap Perovskites for All-Perovskite Tandem Solar Cells

被引:0
作者
Temitmie, Yekitwork Abebe [1 ,2 ]
Haider, Muhammad Irfan [1 ]
Cuzzupe, Daniele T. [1 ]
Mercaldo, Lucia V. [3 ]
Kraner, Stefan [1 ]
Veneri, Paola Delli [3 ]
Benor, Amare [2 ]
Fakharuddin, Azhar [1 ]
Schmidt-Mende, Lukas [1 ]
机构
[1] Univ Konstanz, Dept Phys, D-78464 Constance, Germany
[2] Univ Bahir Dar, Dept Phys, Bahir Dar 6000, Ethiopia
[3] Italian Natl Agcy New Technol Energy & Sustainable, Portici Res Ctr, Portici, Italy
来源
ACS MATERIALS LETTERS | 2024年 / 6卷 / 11期
基金
欧盟地平线“2020”;
关键词
HALIDE PEROVSKITES; CHALLENGES; EFFICIENCY; FILMS;
D O I
10.1021/acsmaterialslett.4c01699
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Narrow-bandgap (NBG) perovskite solar cells based on tin-lead mixed perovskite absorbers suffer from significant open-circuit voltage (V OC) losses due primarily to a high defect density and charge carrier recombination at the device interfaces. In this study, the V OC losses in NBG perovskite single junction cells (E g = 1.21 eV) are addressed. The optimized NBG subcell is then used to fabricate highly efficient all-perovskite tandem solar cells (TSCs). The improvement in the V OC is achieved via the addition of a thin poly(triarylamine) interlayer between the poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS)-based hole transport layer (HTL) and the NBG perovskite. The optimal bilayer HTL results in a champion power conversion efficiency (PCE) of 20.3%, compared to 17.8% of the PEDOT:PSS-based control device. The V OC improvement of the single-junction NBG cell is also successfully transferred to all-perovskite TSC, resulting in a high V OC of 2.00 V and a PCE of 25.1%.
引用
收藏
页码:5190 / 5198
页数:9
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