Integrated development of extreme ultraviolet lithography mask at 32 nm node

被引：0

作者：

Du, Yuchan ^{[1
]}

Li, Hailiang ^{[1
]}

Shi, Lina ^{[1
]}

Li, Chun ^{[2
]}

Xie, Changqing ^{[1
]}

机构：

[1] Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences

[2] Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun

来源：

Guangxue Xuebao/Acta Optica Sinica | 2013年 / 33卷 / 10期

关键词：

32 nm node; Electron beam lithography; Extreme ultraviolet lithography; Finite-difference time-domain method; Mask; X-ray optics;

D O I：

10.3788/AOS201333.1034002

中图分类号：

学科分类号：

摘要：

The first domestic 6 inch (1 inch=2.54 cm) extreme ultraviolet lithography (EUVL) mask for EUVL system is reported. The design of the 6 inch EUVL mask at 32 nm node is described, process characteristics of substrate materials, buffer and absorber layers are investigated in detail, and mask with low defective rate and high efficiency is designed. Suitable Cr absorber layer thickness is decided according to the optical property simulation by finite-difference time-domain (FDTD) method. Electron beam proximity effect is analyzed by using Monte Carlo simulation method. Electron beam lithography is used to generate patterns, and high density plasma etching is used to translate patterns to the Cr absorber layer and SiO2 buffer layer. EUVL mask with critical dimension below 100 nm and critical dimension accuracy less than 20 nm is obtained, which meets the requirements of technical design specifications.

引用

共 25 条

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