Properties of a CuAu phase of AgGaSe2 grown on [100] GaAs substrate

被引：0

作者：

Choi, I.H. ^{[1
]}

Yu, P.Y. ^{[2
,3
]}

机构：

[1] Department of Physics, Chung-Ang University, Seoul, Korea, Republic of

[2] Department of Physics, University of California, Berkeley, CA 94720

[3] Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720

来源：

Appl Phys Lett | / 23卷 / 1-3期

关键词：

Compendex;

D O I：

231909

中图分类号：

学科分类号：

摘要：

Crystal orientation - Electrons - Epitaxial growth - Polarization - Semiconducting gallium arsenide

引用