Improved implanted RESURF MOSFETS in 4H-SiC

被引:0
|
作者
机构
[1] Banerjee, S.
[2] Chatty, K.
[3] Chow, T.P.
[4] Gutmann, R.J.
来源
Banerjee, S. | 2000年 / IEEE, Piscataway, NJ, United States卷
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] 1400 V 4H-SiC power MOSFETs
    Agarwal, A.K.
    Casady, J.B.
    Rowland, L.B.
    Valek, W.F.
    Brandt, C.D.
    Materials Science Forum, 1998, 264-268 (pt 2): : 989 - 992
  • [32] Design and fabrication of 4H-SiC RF MOSFETs
    Gudjonsson, Gudjon I.
    Allerstam, Fredrik
    Sveinbjornsson, Einar O.
    Hjelmgren, Hans
    Nilsson, Per-Ake
    Andersson, Kristoffer
    Zirath, Herbert
    Rodle, Thomas
    Jos, Rik
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (12) : 3138 - 3145
  • [33] Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures
    Rumyantsev, S. L.
    Shur, M. S.
    Levinshtein, M. E.
    Ivanov, P. A.
    Palmour, J. W.
    Agarwal, A. K.
    Hull, B. A.
    Ryu, Sei-Hyung
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (07)
  • [34] Al+ implanted 4H-SiC: improved electrical activation and ohmic contacts
    Nipoti, Roberta
    Hallen, Anders
    Parisini, Antonella
    Moscatelli, Francesco
    Vantaggio, Salvatore
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 767 - +
  • [35] Fast Switching Characteristics of 4H-SiC RESURF-type JFET
    Fujikawa, Kazuhiro
    Sawada, Kenichi
    Tsuno, Takashi
    Tamaso, Hideto
    Harada, Shin
    Namikawa, Yasuo
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 1095 - 1098
  • [36] Lateral straggling of implanted aluminum in 4H-SiC
    Muting, J.
    Bobal, V.
    Neset Sky, T.
    Vines, L.
    Grossner, U.
    APPLIED PHYSICS LETTERS, 2020, 116 (01)
  • [37] Strain measurements on nitrogen implanted 4H-SiC
    Amigou, Matthieu
    Beaufort, M. F.
    Declemy, A.
    Leclerc, S.
    Barbot, J. F.
    SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 185 - 188
  • [38] Microwave Annealing of Ion Implanted 4H-SiC
    Rao, Mulpuri V.
    Nath, A.
    Qadri, S. B.
    Tian, Y-L.
    Nipoti, R.
    ION IMPLANTATION TECHNOLOGY 2010, 2010, 1321 : 241 - +
  • [39] High Temperature Characteristics of 4H-SiC RESURF-type JFET
    Fujikawa, Kazuhiro
    Sawada, Kenichi
    Tokuda, Hitoki
    Tamaso, Hideto
    Harada, Shin
    Shinkai, Jiro
    Tsuno, Takashi
    Namikawa, Yasuo
    SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 727 - 730
  • [40] 800 V 4H-SiC RESURF-type lateral JFETs
    Fujikawa, K
    Shibata, K
    Masuda, T
    Shikata, S
    Hayashi, H
    IEEE ELECTRON DEVICE LETTERS, 2004, 25 (12) : 790 - 791