Improved implanted RESURF MOSFETS in 4H-SiC

被引：0
|
作者：
机构：
[1] Banerjee, S.
[2] Chatty, K.
[3] Chow, T.P.
[4] Gutmann, R.J.
来源：
Banerjee, S. | 2000年 / IEEE, Piscataway, NJ, United States卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Design and implementation of RESURF MOSFETs in 4H-SiC
    Banerjee, S
    Chatty, K
    Chow, TP
    Gutmann, RJ
    SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 715 - 718
  • [2] Improved high-voltage lateral RESURF MOSFETs in 4H-SiC
    Banerjee, S
    Chatty, K
    Chow, TP
    Gutmann, RJ
    IEEE ELECTRON DEVICE LETTERS, 2001, 22 (05) : 209 - 211
  • [3] 4H-SiC double RESURF MOSFETs with a record performance by increasing RESURF dose
    Noborio, Masato
    Suda, Jun
    Kimoto, Tsunenobu
    ISPSD 08: PROCEEDINGS OF THE 20TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2008, : 263 - 266
  • [4] 4H-SiC lateral double RESURF MOSFETs with low ON resistance
    Noborio, Masato
    Suda, Jun
    Kimoto, Tsunenobu
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (05) : 1216 - 1223
  • [5] High-voltage lateral RESURF MOSFETs on 4H-SiC
    Chatty, K.
    Banerjee, S.
    Chow, T.P.
    Gutmann, R.J.
    Hoshi, M.
    Annual Device Research Conference Digest, 1999, : 44 - 45
  • [6] Dose designing and fabrication of 4H-SiC double RESURF MOSFETs
    Noborio, M.
    Suda, J.
    Kimoto, T.
    PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2006, : 273 - +
  • [7] 4H-SiC lateral RESURF MOSFETs on carbon-face substrates
    Okamoto, M
    Suzuki, S
    Kato, M
    Yatsuo, T
    Fukuda, K
    SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 805 - 808
  • [8] Reduction of on-resistance in 4H-SiC Multi-RESURF MOSFETs
    Noborio, Masato
    Negoro, Yuki
    Suda, Jun
    Kimoto, Tsunenobu
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 1305 - +
  • [9] Design and Fabrication of RESURF MOSFETs on 4H-SiC(0001), (1120), and 6H-SiC(0001)
    Kimoto, T
    Kosugi, H
    Suda, J
    Kanzaki, Y
    Matsunami, H
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (01) : 112 - 117
  • [10] Designing of Quasi-Modulated Region in 4H-SiC Lateral RESURF MOSFETs
    Nanen, Yuichiro
    Suda, Jun
    Kimoto, Tsunenobu
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 943 - 946
12345