High-temperature isothermal capacitance transient spectroscopy study on inductively coupled plasma etching damage for p-GaN surfaces

被引：0

作者：

Aoki, Toshichika ^{[1
]}

Wakayama, Hisashi ^{[1
]}

Kaneda, Naoki ^{[2
]}

Mishima, Tomoyoshi ^{[2
]}

Nomoto, Kazuki ^{[3
]}

Shiojima, Kenji ^{[1
]}

机构：

[1] Graduate School of Electrical and Electronics Engineering, University of Fukui, Fukui 910-8507, Japan

[2] Research and Development Laboratory, Corporate Advanced Technology Group, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan

[3] University of Notre Dame, Notre Dame, IN 46556, United States

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D O I：

11NH03

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摘要：

Inductively coupled plasma - Capacitance - Gallium - Current voltage characteristics - III-V semiconductors - Isotherms

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