Wafer bonding of SiC-SiC and SiC-Si by modified suface activated bonding method

被引：0

作者：

Department of Precision Engineering, School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku ^{[1
]}

113-8656, Japan

不详 ^{[2
]}

390-0821, Japan

机构：

来源：

ICEP-IAAC - Int. Conf. Electron. Packag. iMAPS All Asia Conf. | / 542-545期

关键词：

D O I：

7111073

中图分类号：

学科分类号：

摘要：

Silicon wafers - Wafer bonding - Bonding - Interfaces (materials) - Chemical bonds - Diffusion bonding - High resolution transmission electron microscopy - Electronics packaging

引用