Wafer bonding of SiC-SiC and SiC-Si by modified suface activated bonding method

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作者：
Department of Precision Engineering, School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku [1 ]
113-8656, Japan
不详 [2 ]
390-0821, Japan
机构：
来源：
ICEP-IAAC - Int. Conf. Electron. Packag. iMAPS All Asia Conf. | / 542-545期
关键词：
Compilation and indexing terms; Copyright 2024 Elsevier Inc;
D O I：
7111073
中图分类号：
学科分类号：
摘要：
Silicon wafers - Wafer bonding - Bonding - Interfaces (materials) - Chemical bonds - Diffusion bonding - High resolution transmission electron microscopy - Electronics packaging
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