Germanium self-assembled quantum dots in silicon for mid-infrared photodetectors

被引：3

作者：

Yakimov, Andrew I. ^{[1
]}

Dvurechenskii, Anatolii V. ^{[1
]}

机构：

[1] Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Prospekt Lavrent'eva 13, 630090 Novosibirsk, Russia

来源：

International Journal of High Speed Electronics and Systems | 2002年 / 12卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

Electron scattering - Epitaxial growth - Gallium compounds - Heterojunctions - Industrial applications - Optimization - Photodetectors - Semiconductor quantum wells - Signal to noise ratio;

D O I：

10.1142/S0129156402001721

中图分类号：

学科分类号：

摘要：

We present an overview of the experimental results in the field of quantum dot infrared photodetectors (QDIPs) implemented on Ge self-assembled quantum dots (QDs) in Si. QDs are fabricated using Stranski-Krastanov epitaxial growth mode. The effect of photoconductivity is associated with the photoexciation of holes from bound to bound states in Ge QDs or from bound states in Ge dots to continuum states in the Ge wetting and Si barrier layers. The depolarization field effect in the collective interlevel excitations of a dense array of Ge/Si QDs is discussed. The comparison between operating characteristics of QDIPs based on III-V and Ge/Si heterostructures is included.

引用

页码：873 / 889