Nonpolar (1120) p-type nitrogen-doped ZnO by remote-plasma-enhanced metalorganic chemical vapor deposition

被引：0
|
作者：
Gangil, Sandip [1 ]
Nakamura, Atsushi [2 ]
Shimomura, Masaru [2 ]
Temmyo, Jiro [1 ,2 ]
机构：
[1] Graduate School of Electronic Science and Technology, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan
[2] Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2007年 / 46卷 / 20-24期
关键词：
Nonpolar crystal orientation showed a positive effect on the chemical bonding states of nitrogen-doped ZnP (ZnO:N) for attaining p-type conductivity. Remote-plasma-enhanced metalorganic chemical vapor deposition (RPE-MPCVD) was used to grow nonpolar- and polar-orientated films on R-plane and a-plane sapphires; respectively. Non-polar orientation permitted nitrogen doping as the acceptor mode with lesser donor complexes giving p-type conductivity in both as-grown and annealed conditions. Carbon complexes (C with O) were observed in both orientations with lower binding energy in the nonpolar orientation showing weak complexes in the nonpolar mode. The difference in the mechanism of nitrogen incorporation depending on nonpolar- and polar-oriented growths was explained. ©2007 The Japan Society of Applied Physics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [41] P-Type Nitrogen-Doped ZnO Nanoparticles Stable under Ambient Conditions
    Chavillon, Benoit
    Cario, Laurent
    Renaud, Adele
    Tessier, Franck
    Chevire, Francois
    Boujtita, Mohammed
    Pellegrin, Yann
    Blart, Errol
    Smeigh, Amanda
    Hammarstrom, Leif
    Odobel, Fabrice
    Jobic, Stephane
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2012, 134 (01) : 464 - 470
  • [42] Investigation on the P-type activation mechanism in Mg-doped GaN films grown by metalorganic chemical vapor deposition
    Youn, DH
    Lachab, M
    Hao, MS
    Sugahara, T
    Takenaka, H
    Naoi, Y
    Sakai, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (2A): : 631 - 634
  • [43] GROWTH OF ZNO FILMS BY THE PLASMA-ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION TECHNIQUE
    SHIMIZU, M
    MATSUEDA, Y
    SHIOSAKI, T
    KAWABATA, A
    JOURNAL OF CRYSTAL GROWTH, 1985, 71 (01) : 209 - 219
  • [44] Applications of plasma-enhanced metalorganic chemical vapor deposition
    Smaglik, Nathan
    Pokharel, Nikhil
    Ahrenkiel, Phil
    JOURNAL OF CRYSTAL GROWTH, 2020, 535 (535)
  • [45] Remote plasma-enhanced metalorganic chemical vapor deposition of aluminum oxide thin films
    Volintiru, Ioana
    Creatore, Mariadriana
    van Hemmen, Johannes L.
    van de Sanden, Mauritius C. M.
    PLASMA PROCESSES AND POLYMERS, 2008, 5 (07) : 645 - 652
  • [46] Electrical and optical properties of phosphorus-doped p -type ZnO films grown by metalorganic chemical vapor deposition
    Pan, X.H.
    Jiang, J.
    Zeng, Y.J.
    He, H.P.
    Zhu, L.P.
    Ye, Z.Z.
    Zhao, B.H.
    Pan, X.Q.
    Journal of Applied Physics, 2008, 103 (02):
  • [47] Chemical vapor deposition-formed p-type ZnO thin films
    Li, X
    Yan, Y
    Gessert, TA
    Perkins, CL
    Young, D
    DeHart, C
    Young, M
    Coutts, TJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (04): : 1342 - 1346
  • [48] NITROGEN DOPED P-TYPE ZNSE LAYER GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    OHKI, A
    SHIBATA, N
    ZEMBUTSU, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (05): : L909 - L912
  • [49] Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition
    Wen, TC
    Lee, WI
    Sheu, JK
    Chi, GC
    SOLID-STATE ELECTRONICS, 2001, 45 (03) : 427 - 430
  • [50] Optimization and characterization of remote plasma-enhanced chemical vapor deposition silicon nitride for the passivation of p-type crystalline silicon surfaces
    Lauinger, Thomas
    Moschner, Jens
    Aberle, Armin G.
    Hezel, Rudolf
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1998, 16 (02):
12345