Nonpolar (1120) p-type nitrogen-doped ZnO by remote-plasma-enhanced metalorganic chemical vapor deposition

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作者：
Gangil, Sandip [1 ]
Nakamura, Atsushi [2 ]
Shimomura, Masaru [2 ]
Temmyo, Jiro [1 ,2 ]
机构：
[1] Graduate School of Electronic Science and Technology, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan
[2] Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2007年 / 46卷 / 20-24期
关键词：
Nonpolar crystal orientation showed a positive effect on the chemical bonding states of nitrogen-doped ZnP (ZnO:N) for attaining p-type conductivity. Remote-plasma-enhanced metalorganic chemical vapor deposition (RPE-MPCVD) was used to grow nonpolar- and polar-orientated films on R-plane and a-plane sapphires; respectively. Non-polar orientation permitted nitrogen doping as the acceptor mode with lesser donor complexes giving p-type conductivity in both as-grown and annealed conditions. Carbon complexes (C with O) were observed in both orientations with lower binding energy in the nonpolar orientation showing weak complexes in the nonpolar mode. The difference in the mechanism of nitrogen incorporation depending on nonpolar- and polar-oriented growths was explained. ©2007 The Japan Society of Applied Physics;
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